LAMEA Gallium Nitride (GaN) Semiconductor Devices Market

LAMEA Gallium Nitride (GaN) Semiconductor Devices Market Size, Share & Trends Analysis Report By Product, By Wafer Size, By Application, By Component, By Country and Growth Forecast, 2025 - 2032

Report Id: KBV-27913 Publication Date: May-2025 Number of Pages: 150
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Analysis of Market Size & Trends

The Latin America, Middle East and Africa Gallium Nitride (GaN) Semiconductor Devices Market would witness market growth of 26.1% CAGR during the forecast period (2025-2032).

The Brazil market dominated the LAMEA Other Component Market by Country in 2024, and would continue to be a dominant market till 2032; thereby, achieving a market value of $38.3 million by 2032. The Argentina market is showcasing a CAGR of 28.7% during (2025 - 2032). Additionally, The UAE market would register a CAGR of 25.8% during (2025 - 2032).

LAMEA Gallium Nitride (GaN) Semiconductor Devices Market

GaN semiconductor devices, known for their high efficiency and low power dissipation, align well with these sustainability goals. Countries like the United States, China, Japan, and the European Union actively promote the adoption of GaN technology in various applications, including electric vehicles (EVs), renewable energy systems, and telecommunications. For instance, the European Union’s Green Deal and the United States Department of Energy’s initiatives invest heavily in energy-efficient technologies, and GaN plays a crucial role in this.

The renewable energy sector is increasingly leveraging GaN technology to enhance the efficiency of solar inverters and wind power systems. Governments are also promoting electric mobility through incentives, encouraging the use of GaN power systems in EVs for better energy conversion and compact designs. Additionally, tech companies like Apple and Samsung are integrating GaN-based fast chargers, supported by policies promoting energy-efficient consumer electronics.

The LAMEA region is gradually emerging as a promising hub, driven by industrial modernization, strategic defense upgrades, and the adoption of sustainable technologies. South Africa’s industrial landscape is experiencing a technological upgrade, with industrial and power applications driving the demand for GaN semiconductor devices. The South African government’s commitment to modernizing its energy infrastructure, as outlined in the Integrated Resource Plan (IRP), encourages the adoption of advanced semiconductor technologies. The automotive sector significantly drives the demand for GaN semiconductor devices in Brazil. The Brazilian government’s focus on promoting sustainable transportation through the National Electric Mobility Policy supports the integration of advanced semiconductor technologies like GaN. The United Arab Emirates (UAE) 's defense and aerospace sectors are at the forefront of adopting GaN semiconductor devices. The UAE government’s commitment to building a technologically advanced defense infrastructure is evident through initiatives like the UAE Defence Technology and Innovation Strategy (DTIS). As a result, the adoption of GaN technology in LAMEA is poised for steady growth, driven by both industrial demand and government backing.

Free Valuable Insights: The Worldwide Gallium Nitride (GaN) Semiconductor Devices Market is Projected to reach USD 16.78 Billion by 2032, at a CAGR of 24.4%

Based on Product, the market is segmented into Opto-semiconductors, Power Semiconductors, and GaN Radio Frequency Devices. Based on Wafer Size, the market is segmented into 4-inch, 6-inch, 8-inch, and 2-inch. Based on Application, the market is segmented into Radio Frequency (RF), Power Drives, Supplies & Inverters, and Lighting & Lasers. Based on Component, the market is segmented into Power IC, Transistor, Rectifier, Diode, and Other Component. Based on countries, the market is segmented into Brazil, Argentina, UAE, Saudi Arabia, South Africa, Nigeria, and Rest of LAMEA.

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List of Key Companies Profiled

  • Fujitsu Limited
  • NXP Semiconductors N.V.
  • Texas Instruments, Inc.
  • Infineon Technologies AG
  • Qorvo, Inc.
  • Mitsubishi Electric Corporation
  • Sumitomo Electric Industries, Ltd.
  • STMicroelectronics N.V.
  • NextGen Power Systems, Inc.
  • Efficient Power Conversion Corporation, Inc.

LAMEA Gallium Nitride (GaN) Semiconductor Devices Market Report Segmentation

By Product

  • Opto-semiconductors
  • Power Semiconductors
  • GaN Radio Frequency Devices

By Wafer Size

  • 4-inch
  • 6-inch
  • 8-inch
  • 2-inch

By Application

  • Radio Frequency (RF)
  • Power Drives
  • Supplies & Inverters
  • Lighting & Lasers

By Component

  • Power IC
  • Transistor
  • Rectifier
  • Diode
  • Other Component

By Country

  • Brazil
  • Argentina
  • UAE
  • Saudi Arabia
  • South Africa
  • Nigeria
  • Rest of LAMEA
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