According to a new report, published by KBV research, The Global Gallium Nitride (GaN) Semiconductor Devices Market size is expected to reach $16.78 billion by 2032, rising at a market growth of 24.4% CAGR during the forecast period.
The integration of Artificial Intelligence (AI) and the Internet of Things (IoT), known as AIoT, transforms how devices interact and process data in real-time. GaN semiconductor devices are essential in this transformation because of their capacity to manage power efficiently and process data at high speeds. GaN’s superior frequency handling and low power dissipation make it ideal for AIoT applications that require rapid data transmission and minimal energy loss.
The Opto-semiconductors segment captured the maximum revenue in the Global Gallium Nitride (GaN) Semiconductor Devices Market by Product in 2024, thereby, achieving a market value of $6.00 billion by 2032. GaN-based optoelectronic components have been widely adopted in applications such as laser diodes, LEDs, and photodetectors, which has contributed to the segment's dominance. The superior efficiency, high brightness, and durability of GaN opto-semiconductors make them ideal for solid-state lighting, displays, and high-speed optical communication systems.
The 4-inch segment is experiencing a CAGR of 23.8 % during the forecast period. It is possible to attribute this dominance to the pervasive use of 4-inch wafers in the production of high-frequency and high-power devices. The 4-inch size is the preferred choice among semiconductor manufacturers due to its optimal equilibrium between cost and performance. It offers a reliable platform for producing RF components, power devices, and optoelectronic applications, where GaN’s high efficiency and power density are crucial.
The Radio Frequency (RF) segment led the maximum revenue in the Global Gallium Nitride (GaN) Semiconductor Devices Market by Application in 2024, thereby, achieving a market value of $5.00 billion by 2032. GaN-based RF devices are highly valued for delivering high power output at high frequencies, essential for telecommunications, aerospace, and defense applications. The ongoing expansion of 5G networks and the increasing demand for high-frequency wireless communication systems have significantly driven the adoption of GaN RF devices. GaN's superior power density, high efficiency, and ability to operate at elevated temperatures make it the preferred choice for RF amplifiers, transceivers, and radar systems.
The Power IC segment is growing at a CAGR of 23.5 % during the forecast period. Power ICs are integral to many high-power applications, including power management systems, automotive electronics, data centers, and industrial equipment. The remarkable efficiency, high voltage capability, and compact size of GaN power ICs make them highly suitable for applications requiring reliable and efficient power conversion.
Full Report: https://www.kbvresearch.com/gallium-nitride-semiconductor-devices-market/
The North America region dominated the Global Gallium Nitride (GaN) Semiconductor Devices Market by Region in 2024, thereby, achieving a market value of $7.27 billion by 2032. The Europe region is anticipated to grow a CAGR of 24.1% during (2025 - 2032). Additionally, The Asia Pacific region would witness a CAGR of 25.1% during (2025 - 2032).
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