LAMEA Power Transistor Market

LAMEA Power Transistor Market Size, Share & Industry Trends Analysis Report By Type (Bipolar Junction Transistor, Field Effect Transistor and Heterojunction Bipolar Transistor), By Technology, By Vertical, By Country and Growth Forecast, 2023 - 2030

Report Id: KBV-17104 Publication Date: August-2023 Number of Pages: 184
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Market Report Description

The Latin America, Middle East and Africa Power Transistor Market would witness market growth of 8.4% CAGR during the forecast period (2023-2030).In the year 2026, the LAMEA market's volume is expected to surge to 147.5 million units, showcasing a growth of 10.3% (2023-2030).

Electronics are being used more frequently in the aerospace and military sectors, which offers a wide range of business opportunities. It improves the process of surveillance and intelligence collection. The power electronics also solve concerns with power stability, cost, size, and weight. In the upcoming years, these elements will help power electronics. Due to the rapid adoption of modern power electronics products, the demand for power transistors has also increased in defence and aerospace sector.

The sector is also aware of the ongoing struggle to improve communications, command, intelligence, and surveillance capabilities while lowering size, weight, power, and cost. As a result, aerospace and defence companies are being pressured to spend money on systems with ever-rising power densities and capabilities. The expansion of renewable energy sources, such as solar and wind power generation, relies on power transistors for efficient power conversion and control. As the renewable energy sector grows, so does the demand for power transistors.

Moreover, the rollout of 5G networks requires advanced power transistor technology for high-frequency and high-power applications in base stations and network infrastructure. The adoption of WBG materials like SiC and GaN is enhancing the efficiency and performance of power transistors, particularly in high-power applications. Therefore, the need for energy-efficient devices and systems, both for environmental reasons and cost savings, is boosting the demand for power transistors that can operate at higher efficiencies.

In 2019, Saudi Arabia was one of the first Middle East and North Africa (MENA) countries to launch 5G networks. According to the Saudi Arabian Communications and Information Technology Commission (CITC), 60 out of 118 governorates were overall served by 5G by the end of the second quarter, an increase of seven from the first quarter of 2021. One of the main sectors in the GCC is Saudi Arabia for consumer electronics. Semiconductors that can handle higher frequencies and data rates are required to deploy 5G technology. This has increased the need for bonding techniques that guarantee low signal loss, high reliability, and efficient thermal management. As a result of the rising 5G network in the LAMEA region, the market is expected to grow.

The Brazil market dominated the LAMEA Power Transistor Market by Country in 2022 and would continue to be a dominant market till 2030; thereby, achieving a market value of $389.1 million by 2030. The Argentina market is showcasing a CAGR of 8.9% during (2023 - 2030). Additionally, The UAE market would register a CAGR of 8.1% during (2023 - 2030).

Based on Type, the market is segmented into Bipolar Junction Transistor, Field Effect Transistor and Heterojunction Bipolar Transistor. Based on Technology, the market is segmented into Low-voltage FETs, RF Microwave Power, High-Voltage FETs, and IGBT Transistor. Based on Vertical, the market is segmented into Manufacturing, Consumer Electronics, Automotive, IT & Telecommunication and Others. Based on countries, the market is segmented into Brazil, Argentina, UAE, Saudi Arabia, South Africa, Nigeria, and Rest of LAMEA.

Free Valuable Insights: The Worldwide Power Transistor Market is Projected to reach USD 20.2 Billion by 2030, at a CAGR of 5.6%

The market research report covers the analysis of key stake holders of the market. Key companies profiled in the report include Texas Instruments, Inc., Infineon Technologies AG, NXP Semiconductors N.V., STMicroelectronics N.V., Microchip Technology Incorporated, Mitsubishi Electric Corporation, Renesas Electronics Corporation, Vishay Intertechnology, Inc., Rohm Co., Ltd. and Diodes Incorporated

Scope of the Study

Market Segments Covered in the Report:

By Type (Volume, Million Units, USD Million, 2019-2030)

  • Bipolar Junction Transistor
  • Field Effect Transistor
  • Heterojunction Bipolar Transistor

By Technology (Volume, Million Units, USD Million, 2019-2030)

  • Low-voltage FETs
  • RF Microwave Power
  • High-Voltage FETs
  • IGBT Transistor

By Vertical (Volume, Million Units, USD Million, 2019-2030)

  • Manufacturing
  • Consumer Electronics
  • Automotive
  • IT & Telecommunication
  • Others

By Country (Volume, Million Units, USD Million, 2019-2030)

  • Brazil
  • Argentina
  • UAE
  • Saudi Arabia
  • South Africa
  • Nigeria
  • Rest of LAMEA

Key Market Players

List of Companies Profiled in the Report:

  • Texas Instruments, Inc.
  • Infineon Technologies AG
  • NXP Semiconductors N.V.
  • STMicroelectronics N.V.
  • Microchip Technology Incorporated
  • Mitsubishi Electric Corporation
  • Renesas Electronics Corporation
  • Vishay Intertechnology, Inc.
  • Rohm Co., Ltd.
  • Diodes Incorporated
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