The Global Tunnel Field Effect Transistor Market is Predict to reach $1.6 Billion by 2028, at a CAGR of 9.8%

Published Date: 21-Feb-2023

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Tunnel Field Effect Transistor Market Growth, Trends and Report Highlights

According to a new report, published by KBV research, The Global Tunnel Field Effect Transistor Market size is expected to reach $1.6 billion by 2028, rising at a market growth of 9.8% CAGR during the forecast period.

The Automotive segment is showcasing a CAGR of 10% during (2022 - 2028). This is because of cars' features, like head-up displays, sensors, cell phone & communication integration, autonomous driving aids, and the high-performance elements in the engines. These features are all possible due to the semiconductors which is driving innovation in vehicle advancement. Semiconductors and transistors have made it possible to replace manual systems with electrical ones.

The Lateral Tunneling segment acquired maximum revenue share in the Global Tunnel Field Effect Transistor Market by Product Type in 2021 thereby, achieving a market value of $1 billion by 2028. This is due to the usage of the laterally asymmetric-doped channel in a TFET, which enhances its ON current (ION). It also improves transconductance (gm) and the cut-off frequency (fT) without increasing the OFF-state current. In addition, there is a rise in lateral products due to the rising usage of semiconductors, which will boost the segment’s expansion in the projected period.

The Asia Pacific market dominated the Global Tunnel Field Effect Transistor Market by Region in 2021, and would continue to be a dominant market till 2028; thereby, achieving a market value of $599.5 Million by 2028. The Europe market is exhibiting a CAGR of 9.6% during (2022 - 2028). Additionally, The North America market would showcase a CAGR of 9.1% during (2022 - 2028).

Full Report:

The market research report has exhaustive quantitative insights providing a clear picture of the market potential in various segments across the globe with country wise analysis in each discussed region. The key impacting factors of the market have been discussed in the report with the elaborated company profiles of Qorvo, Inc., Texas Instruments, Inc., Infineon Technologies AG, ON Semiconductor Corporation, Broadcom, Inc., STMicroelectronics N.V., Advanced Linear Devices, Inc., Axcera, Inc., and Focus Microwaves, Inc.

Global Tunnel Field Effect Transistor Market Segmentation

By End User

  • Consumer Electronics
  • Automotive
  • Industrial
  • Aerospace & Defense
  • Others

By Product Type

  • Lateral Tunneling
  • Vertical Tunneling

By Geography

  • North America
    • US
    • Canada
    • Mexico
    • Rest of North America
  • Europe
    • Germany
    • UK
    • France
    • Russia
    • Spain
    • Italy
    • Rest of Europe
  • Asia Pacific
    • China
    • Japan
    • India
    • South Korea
    • Singapore
    • Malaysia
    • Rest of Asia Pacific
    • Brazil
    • Argentina
    • UAE
    • Saudi Arabia
    • South Africa
    • Nigeria
    • Rest of LAMEA

Companies Profiled

  • Qorvo, Inc.
  • Texas Instruments, Inc.
  • Infineon Technologies AG
  • ON Semiconductor Corporation
  • Broadcom, Inc.
  • STMicroelectronics N.V.
  • Advanced Linear Devices, Inc.
  • Axcera, Inc.
  • Focus Microwaves, Inc.

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  • The highest number of Market tables and figures
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Related Reports:

North America Tunnel Field Effect Transistor Market size & Opportunities 2022-2028

Europe Tunnel Field Effect Transistor Market & Growth Forecast 2022-2028

Asia Pacific Tunnel Field Effect Transistor Market Share & Industry Outlook to 2028

LAMEA Tunnel Field Effect Transistor Market Growth, Trends & Forecasts 2022-2028

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