According to a new report, published by KBV research, The Global High Electron Mobility Transistor Market size is expected to reach $9.4 billion by 2030, rising at a market growth of 7.3% CAGR during the forecast period.
The Gallium Nitride (GaN) segment is leading the Global High Electron Mobility Transistor Market, by Type in 2022; thereby, achieving a market value of $4.3 billion by 2030. GaN HEMTs are increasingly used in power electronics and radio frequency (RF) applications. Their high breakdown voltage and low on-resistance make them attractive for power conversion and RF amplification, contributing to their adoption in various industries. The rollout of 5G technology has led to a growing demand for high-frequency and high-power electronic components. GaN HEMTs, with their ability to operate at higher frequencies and deliver high power, are well-positioned to meet the requirements of 5G infrastructure, including base stations and other components. These factors will boost the demand in the segment.
The Consumer Electronics segment is registering a CAGR of 5.6 % during (2023 - 2030). Smartphones, tablets, and other wireless communication devices require high-frequency components for efficient signal processing and data transfer. HEMTs, with their high electron mobility, are well-suited for use in these devices' RF and microwave circuits. Consumer electronics, such as GPS navigation devices, rely on HEMTs for their ability to operate at high frequencies. The growth of the satellite navigation sector and the integration of precise positioning technology in consumer devices contribute to the demand for HEMTs. These factors will pose lucrative growth prospects for the segment.
The Asia Pacific region dominated the Global High Electron Mobility Transistor Market, by Region in 2022, and would continue to be a dominant market till 2030; thereby, achieving a market value of $3.5 billion by 2030. The Europe region is anticipating a CAGR of 6.8% during (2023 - 2030). Additionally, The North America region would exhibit a CAGR of 6.6% during (2023 - 2030).
Full Report: https://www.kbvresearch.com/high-electron-mobility-transistor-market/
The market research report has exhaustive quantitative insights providing a clear picture of the market potential in various segments across the globe with country wise analysis in each discussed region. The key impacting factors of the market have been discussed in the report with the elaborated company profiles of Qorvo, Inc., Infineon Technologies AG, MACOM Technology Solutions Holdings, Inc., WOLFSPEED, INC., Texas Instruments, Inc., Sumitomo Electric Industries, Ltd., Analog Devices, Inc., Intel Corporation, NXP Semiconductors N.V., Mitsubishi Electric Corporation
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