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The Europe Gallium Nitride (GaN) Semiconductor Devices Market would witness market growth of 15.1% CAGR during the forecast period (2017 ? 2023). The automotive sector is increasingly utilizing GaN technology in automotive lights, indoor & outdoor lighting, and pulse-powered laser, and as a result, contributing to the growth of the opto-semiconductors in the automotive and consumer electronics sectors.
Nevertheless, the GaN radio frequency devices segment would be the fastest growing segment during the forecast period. The growth can be attributed to the increasing use of Gallium radio frequency devices in varied industrial applications such as in consumer electronics and defense. Based on Product Type, the market report segments the market into Opto-Semiconductors, Power Semiconductors, and GaN Radio Frequency Devices.
Based on Wafer Size, the market report segments the market into 4 inch, 2 inch, 8 inch, and 6 inch. Based on Application, the Gallium Nitride (GaN) Semiconductor Devices market report segments the market into Information & Communication Technology, Consumer Electronics, Aerospace & Defense, Automotive, Industrial & Power, Healthcare, and Others Based on Countries, the Gallium Nitride (GaN) Semiconductor Devices market segments the market into Germany, UK, France, Russia, Spain, Italy, and Rest of Europe.
The market research report covers the competition analysis of key stake holders of the Europe Gallium Nitride (GaN) Semiconductor Devices Market. Key companies profiled in the report include NextGen Power Systems, Inc., Cree, Inc. (Wolfspeed), Efficient Power Conversion Corporation, Inc., GaN Systems, Inc., Toshiba Corporation,Fujitsu Limited,NXP Semiconductors N.V., Texas Instruments Incorporated, Infineon Technologies AG, and Qorvo, Inc.